The MOS Single Electron Transistor (MOS-SET)
نویسندگان
چکیده
We study very small gated SOI nanowires defined by e-beam lithography. Electrical transport at low temperature (below ≈ 10K) is dominated by Coulomb blockade. In the metallic regime at high Vg very periodic oscillations are recorded and the measured period corresponds to the whole surface of wire covered by the gate. Below the threshold the energy level quantization is clearly seen. The interplay between a charging energy and a mean energy level spacing of the same order of magnitude in a well controlled and characterized device is of great interest in view of making SET devices operating at room temperature. Indeed those devices have diameters below 10nm and are therefore in a regime where the energy level spacing cannot be neglected.
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